? semiconductor components industries, llc, 2000 november, 2000 rev. 2 1 publication order number: bss138lt1/d bss138lt1 preferred device power mosfet 200 mamps, 50 volts nchannel sot23 typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, pcmcia cards, cellular and cordless telephones. ? low threshold voltage (v gs(th) : 0.5v...1.5v) makes it ideal for low voltage applications ? miniature sot23 surface mount package saves board space maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 50 vdc gatetosource voltage continuous v gs 20 vdc drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) i d i dm 200 800 ma total power dissipation @ t a = 25 c p d 225 mw operating and storage temperature range t j , t stg 55 to 150 c thermal resistance junctiontoambient r q ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c 3 1 2 device package shipping ordering information bss138lt1 sot23 3000 tape & reel nchannel sot23 case 318 style 21 http://onsemi.com w marking diagram j1 w = work week pin assignment 3 2 1 drain gate 2 1 3 source bss138lt3 sot23 10,000 tape & reel 200 mamps 50 volts r ds(on) = 3.5 preferred devices are recommended choices for future use and best overall value.
bss138lt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 250 m adc) v (br)dss 50 vdc zero gate voltage drain current (v ds = 25 vdc, v gs = 0 vdc) (v ds = 50 vdc, v gs = 0 vdc) i dss 0.1 0.5 m adc gatesource leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 0.1 m adc on characteristics (note 1.) gatesource threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.5 1.5 vdc static draintosource onresistance (v gs = 2.75 vdc, i d < 200 madc, t a = 40 c to +85 c) (v gs = 5.0 vdc, i d = 200 madc) r ds(on) 5.6 10 3.5 ohms forward transconductance (v ds = 25 vdc, i d = 200 madc, f = 1.0 khz) g fs 100 mmhos dynamic characteristics input capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c iss 40 50 pf output capacitance (v ds = 25 vdc, v gs = 0, f = 1 mhz) c oss 12 25 transfer capacitance (v dg = 25 vdc, v gs = 0, f = 1 mhz) c rss 3.5 5.0 switching characteristics (note 2.) turnon delay time (v dd =30vdc i d =02adc) t d(on) 20 ns turnoff delay time (v dd = 30 vdc, i d = 0.2 adc,) t d(off) 20 1. pulse test: pulse width 300 m s, duty cycle 2%. 2. switching characteristics are independent of operating junction temperature.
bss138lt1 http://onsemi.com 3 typical electrical characteristics r ds(on) , drain-to-source resistance (normalized) figure 1. onregion characteristics 1 t j , junction temperature ( c) figure 2. transfer characteristics figure 3. onresistance variation with temperature v gs = 10 v i d = 0.8 a -55 -5 45 95 145 0.6 0.8 v gs , gate-to-source voltage (volts) 0 4 0 q t , total gate charge (pc) 8 500 v ds = 40 v t j = 25 c 1000 i d = 200 ma 1500 1.2 2 1.4 1.6 1.8 v gs = 4.5 v i d = 0.5 a 2000 10 2 6 v gs(th) , variance (volts) 1 t j , junction temperature ( c) i d = 1.0 ma -55 -5 45 95 145 0.75 0.875 1.125 1.25 0 0.3 0.4 0.1 0.6 0.2 figure 4. threshold voltage variation with temperature 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) figure 5. gate charge v ds = 10 v 150 c 25 c -55 c 3.5 0.5 4 024 10 0 0.3 0.4 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.1 8 0.6 0.2 0.5 13 9 57 v gs = 3.25 v v gs = 2.75 v v gs = 2.5 v v gs = 3.0 v v gs = 3.5 v 0.7 0.8 t j = 25 c 0.7 0.8 0.9 4.5 0.5 0 2.2 -30 20 70 120 2500 3000
bss138lt1 http://onsemi.com 4 typical electrical characteristics r ds(on) , drain-to-source resistance (ohms) figure 6. onresistance versus drain current 0 0.1 0.2 2 5 6 figure 7. onresistance versus drain current i d , drain current (amps) figure 8. onresistance versus drain current 0.001 0.1 1 figure 9. onresistance versus drain current v sd , diode forward voltage (volts) figure 10. body diode forward voltage i d , diode current (amps) 25 c v gs = 2.5 v t j = 150 c 4 0 0.2 0.4 0.6 3 0.01 -55 c 25 c 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.1 0.2 1 7 i d , drain current (amps) v gs = 2.75 v 5 3 0 120 40 0 80 510 c iss 15 0.05 0.15 0.25 150 c -55 c 6 8 4 2 0.05 0.15 0.25 20 1.0 1.2 150 c 25 c -55 c 8 9 7 100 20 60 figure 11. capacitance r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 2.5 3 i d , drain current (amps) 25 c v gs = 4.5 v 2 1.5 r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.05 1 4 i d , drain current (amps) v gs = 10 v 3 2 0.1 0.3 0.5 150 c -55 c 3.5 4.5 2.5 1.5 0.1 0.3 0.5 150 c 25 c -55 c 4 4.5 3.5 10 1 0.25 0.45 0.15 0.35 5 5.5 6 0.25 0.45 0.15 0.35 25 c oss c rss
bss138lt1 http://onsemi.com 5 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
bss138lt1 http://onsemi.com 6 package dimensions style 21: pin 1. gate 2. source 3. drain d j k l a c b s h g v 3 1 2 dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. sot23 (to236) case 31808 issue af
bss138lt1 http://onsemi.com 7 notes
bss138lt1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bss138lt1/d thermal clad is a registered trademark of the bergquist company. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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